Spectroscopic second harmonic generation measured on plasma-deposited hydrogenated amorphous silicon thin films

被引：22

作者：

Kessels, WMM ^{[1
]}

Gielis, JJH ^{[1
]}

Aarts, IMP ^{[1
]}

Leewis, CM ^{[1
]}

van de Sanden, MCM ^{[1
]}

机构：

[1] Eindhoven Univ Technol, Dept Appl Phys, NL-5600 MB Eindhoven, Netherlands

来源：

APPLIED PHYSICS LETTERS | 2004年 / 85卷 / 18期

关键词：

D O I：

10.1063/1.1812836

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Optical second harmonic generation (SHG) has been measured for plasma-deposited thin films of hydrogenated amorphous silicon (a-Si:H) at different polarization states for pump photon energies between 1.0 and 1.7 eV. Distinct resonance peaks are observed in this energy range and it is shown that the SH signal originates from an isotropic contribution at both the film-surface and substrate-interface region. The possibility that the SH signal originates from surface and interface dangling bond states of a-Si:H is discussed. (C) 2004 American Institute of Physics.

引用

页码：4049 / 4051

页数：3

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