Tilt of InGaN layers on miscut GaN substrates

被引：11

作者：

Krysko, M. ^{[1
]}

Domagala, J. Z. ^{[3
]}

Czernecki, R. ^{[1
,2
]}

Leszczynski, M. ^{[1
,2
]}

Perlin, P. ^{[1
,2
]}

Suski, T. ^{[1
]}

Grzanka, Sz. ^{[2
]}

Targowski, G. ^{[2
]}

Grzegory, I. ^{[1
,2
]}

Bockowski, M. ^{[1
,2
]}

Porowski, S. ^{[1
]}

机构：

[1] Inst High Pressure Phys UNIPRESS, PL-01142 Warsaw, Poland

[2] TopGaN, PL-01142 Warsaw, Poland

[3] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2010年 / 4卷 / 07期

关键词：

III-V semiconductors; heteroepitaxy; lattice mismatch;

D O I：

10.1002/pssr.201004053

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on the crystallographic orientation of InGaN layers grown on GaN substrates with a miscut with respect to c-planes up to 2.5 degrees. The samples were examined using high-resolution X-ray diffraction (HRXRD) and atomic force microscopy (AFM). Because of the large.(up to about 2% in this study) lattice mismatch between InGaN and GaN, an additional tilt between the c lattice plans of InGaN and GaN was observed and explained by using the Nagai model [J. Appl] Phys. 45, 3789 (1974)]. We observed that for part of the samples, this tilt is about 10% smaller compared to the one predicted by the model. The experimental data are important for understanding the microstructuure of InGaN layers grown on substrates of non-perfect morphology.

引用

页码：142 / 144

页数：3

共 5 条

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