Design of AlGaN-based quantum structures for low threshold UVC lasers

被引：26

作者：

Guo, Qiang ^{[1
]}

Kirste, Ronny ^{[2
]}

Mita, Seiji ^{[2
]}

Tweedie, James ^{[2
]}

Reddy, Pramod ^{[2
]}

Moody, Baxter ^{[2
]}

Guan, Yan ^{[1
]}

Washiyama, Shun ^{[1
]}

Klump, Andrew ^{[1
]}

Sitar, Zlatko ^{[1
,2
]}

Collazo, Ramon ^{[1
]}

机构：

[1] North Carolina State Univ, Dept Mat Sci & Engn, Raleigh, NC 27695 USA

[2] Adroit Mat, 2054 Kildaire Farm Rd,Suite 205, Cary, NC 27518 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2019年 / 126卷 / 22期

基金：

美国国家科学基金会;

关键词：

WELL-WIDTH DEPENDENCE; ALN/ALGAN SUPERLATTICES; PIEZOELECTRIC FIELDS; ALN; PLANE;

D O I：

10.1063/1.5125256

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The influence of the polarization field on the emission properties of the AlGaN-based quantum structures grown on AlN substrates was investigated as a function of well width, barrier width, and barrier height. A thin AlGaN well and a thin AlN barrier design reduced the polarization field to similar to 0.5 MV/cm, resulting in an ultralow laser threshold of 3 kW/cm(2) in an optically pumped configuration. These experimental results were used to validate the simulation. In the next step, a structure with Al0.7Ga0.3N barriers was designed to support carrier injection with a minimal loss in optical performance. This structure showed a threshold of 7 kW/cm(2) under optical pumping and an estimated threshold current of 8 kA/cm(2) for the electric injection. Published under license by AIP Publishing.

引用

页数：9

共 53 条

[1] Internal Quantum Efficiency of Whole-Composition-Range AlGaN Multiquantum Wells [J].

Ban, Kazuhito ;

Yamamoto, Jun-ichi ;

Takeda, Kenichiro ;

Ide, Kimiyasu ;

Iwaya, Motoaki ;

Takeuchi, Tetsuya ;

Kamiyama, Satoshi ;

Akasaki, Isamu ;

Amano, Hiroshi .

APPLIED PHYSICS EXPRESS, 2011, 4 (05)

[2] Deep-ultraviolet light emission properties of nonpolar M-plane AlGaN quantum wells [J].

Banal, Ryan G. ;

Taniyasu, Yoshitaka ;

Yamamoto, Hideki .

APPLIED PHYSICS LETTERS, 2014, 105 (05)

[3] Well-width dependence of the ground level emission of GaN/AlGaN quantum wells [J].

Bonfiglio, A ;

Lomascolo, M ;

Traetta, G ;

Cingolani, R ;

Di Carlo, A ;

Della Sala, F ;

Lugli, P ;

Botchkarev, A ;

Morkoc, H .

JOURNAL OF APPLIED PHYSICS, 2000, 87 (05) :2289-2292

[4] Homoepitaxial AlN thin films deposited on m-plane (1(1)over-bar00) AlN substrates by metalorganic chemical vapor deposition [J].

Bryan, Isaac ;

Bryan, Zachary ;

Bobea, Milena ;

Hussey, Lindsay ;

Kirste, Ronny ;

Collazo, Ramon ;

Sitar, Zlatko .

JOURNAL OF APPLIED PHYSICS, 2014, 116 (13)

[5] Surface preparation of non-polar single-crystalline AlN substrates [J].

Bryan, Isaac ;

Akouala, Christer-Rajiv ;

Tweedie, James ;

Bryan, Zachary ;

Rice, Anthony ;

Kirste, Ronny ;

Collazo, Ramon ;

Sitar, Zlatko .

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4, 2014, 11 (3-4) :454-457

[6]

Bryan IsaacS., 2015, AL RICH ALGAN ALN GR

[7]

Bryan J., 2019, APPL PHYS LETT, V114

[8]

Bryan Z., 2015, Point Defect Identification and Management for Sub-300 Nm Light Emitting Diodes and Laser Diodes Grown on Bulk AlN Substrates North Carolina State University

[9] High internal quantum efficiency in AlGaN multiple quantum wells grown on bulk AlN substrates [J].

Bryan, Zachary ;

Bryan, Isaac ;

Xie, Jinqiao ;

Mita, Seiji ;

Sitar, Zlatko ;

Collazo, Ramon .

APPLIED PHYSICS LETTERS, 2015, 106 (14)

[10] Demonstration of nonpolar m-plane InGaN/GaN light-emitting diodes on free-standing m-plane GaN substrates [J].

Chakraborty, A ;

Haskell, BA ;

Keller, S ;

Speck, JS ;

Denbaars, SP ;

Nakamura, S ;

Mishra, UK .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (1-7) :L173-L175

← 1 2 3 4 5 6 →