Texture of transition-metal boride, nitride, and silicide films produced by ion deposition

被引:3
作者
Ignatenko, P. I.
Goncharov, A. A.
Terpii, D. N.
机构
[1] Donetsk Natl Univ, UA-83055 Donetsk, Ukraine
[2] Donbass State Acad Mech Engn, UA-84313 Kramatorsk, Donetsk Oblast, Ukraine
关键词
D O I
10.1134/S0020168507040036
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We analyze preferential orientation in films of transition-metal borides, nitrides, and silicides produced by different ion deposition techniques. The texture of the films is shown to depend primarily on the energy of incident atoms, the structural state of the substrate, and the deposition temperature. Orientation relationships between the substrate and forming phases are determined.
引用
收藏
页码:344 / 348
页数:5
相关论文
共 19 条
[1]  
ANDREEV AA, 2005, MAT MEZHD KONF OTTOM, P144
[2]  
Andrievskii RA, 1997, USP KHIM+, V66, P57
[3]   Phase formation behavior and diffusion barrier property of reactively sputtered tantalum-based thin films used in semiconductor metallization [J].
Chen, GS ;
Lee, PY ;
Chen, ST .
THIN SOLID FILMS, 1999, 353 (1-2) :264-273
[4]  
[Гончаров A.А. Goncharov A.A.], 2005, [Неорганические материалы, Neorganicheskie materialy], V41, P799
[5]  
IEVLEV VM, 2002, KHARKOVSKAYA NAUCHNA, P82
[6]  
[Игнатенко П.И. Ignatenko P.I.], 2005, [Неорганические материалы, Neorganicheskie materialy], V41, P40
[7]  
Ignatenko PI, 1998, METALLOFIZ NOV TEKH+, V20, P70
[8]  
IGNATENKO PI, 2003, IAN SSSR NEORG MATER, V39, P560
[9]  
IGNATENKO PI, 1991, IAN SSSR NEORG MATER, V27, P1628
[10]  
IGNATENKO PI, 2001, IAN SSSR NEORG MATER, V37, P1201