Control of substrate surface temperature in millisecond annealing technique using thermal plasma jet

被引：16

作者：

Okada, T. ^{[1
]}

Higashi, S. ^{[1
]}

Kaku, H. ^{[1
]}

Koba, N. ^{[1
]}

Murakami, H. ^{[1
]}

Miyazaki, S. ^{[1
]}

机构：

[1] Hiroshima Univ, Grad Sch Adv Sci Matter, Dept Semicond Elect & Integrat Sci, Higashihiroshima 7398530, Japan

来源：

THIN SOLID FILMS | 2007年 / 515卷 / 12期

关键词：

rapid thermal annealing; temperature measurement; thermal plasma jet;

D O I：

10.1016/j.tsf.2006.10.049

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Temporal variations of substrate surface temperature in scanning Ar thermal plasma jet has been investigated based on an analysis of transient changes in optical reflectivity. The accuracy of the temperature measurement has been evaluated to be 30 K at temperature around 1760 K. The maximum surface temperature (T-max) is controlled in the range from similar to 960 to similar to 1780 K with keeping the annealing duration (t(a)) around similar to 3 ms by changing the Ar gas flow rate 0 and distance between the plasma jet and the substrate (a) under a constant scanning speed (v) of 500 mm/s. (c) 2006 Elsevier B.V. All rights reserved.

引用

页码：4897 / 4900

页数：4

共 8 条

[1] Crystallization of Si films on glass substrate using thermal plasma jet [J].

Higashi, S ;

Kaku, H ;

Taniguchi, H ;

Murakami, H ;

Miyazaki, S .

THIN SOLID FILMS, 2005, 487 (1-2) :122-125

[2] Application of plasma jet crystallization technique to fabrication of thin-film transistor [J].

Higashi, S ;

Kaku, H ;

Murakami, H ;

Miyazaki, S ;

Watakabe, H ;

Ando, N ;

Sameshima, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 2005, 44 (1-7) :L108-L110

[3] Pulsed-laser-induced microcrystallization and amorphization of silicon thin films [J].

Higashi, S ;

Sameshima, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2001, 40 (2A) :480-485

[4] A new crystallization technique of Si films on glass substrate using thermal plasma jet [J].

Kaku, H ;

Higashi, S ;

Taniguchi, H ;

Murakami, H ;

Miyazaki, S .

APPLIED SURFACE SCIENCE, 2005, 244 (1-4) :8-11

[5]

OKADA T, IN PRESS JPN J APPL, V45

[6] HIGH-PERFORMANCE TFTS FABRICATED BY XECL EXCIMER LASER ANNEALING OF HYDROGENATED AMORPHOUS-SILICON FILM [J].

SERA, K ;

OKUMURA, F ;

UCHIDA, H ;

ITOH, S ;

KANEKO, S ;

HOTTA, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1989, 36 (12) :2868-2872

[7] ELECTRICAL CHARACTERISTICS OF HIGH-MOBILITY FINE-GRAIN POLY-SI TFTS FROM LASER IRRADIATED SPUTTER-DEPOSITED SI FILM [J].

SERIKAWA, T ;

SHIRAI, S ;

OKAMOTO, A ;

SUYAMA, S .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (11) :L1871-L1873

[8] REFRACTIVE INDEX OF SEVERAL GLASSES AS A FUNCTION OF WAVELENGTH AND TEMPERATURE [J].

WRAY, JH ;

NEU, JT .

JOURNAL OF THE OPTICAL SOCIETY OF AMERICA, 1969, 59 (06) :774-&

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