High speed all optical logic gates based on quantum dot semiconductor optical amplifiers

被引：94
作者：
Ma, Shaozhen [1 ]
Chen, Zhe [1 ]
Sun, Hongzhi [1 ]
Dutta, Niloy K. [1 ]
机构：
[1] Univ Connecticut, Dept Phys, Storrs, CT 06269 USA
来源：
OPTICS EXPRESS | 2010年 / 18卷 / 07期
关键词：
LINEWIDTH ENHANCEMENT FACTOR; HIGH-OUTPUT POWER; XOR GATE; GAIN; MODULATION; SATURATION; DYNAMICS;
D O I：
10.1364/OE.18.006417
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
A scheme to realize all-optical Boolean logic functions AND, XOR and NOT using semiconductor optical amplifiers with quantum-dot active layers is studied. nonlinear dynamics including carrier heating and spectral hole-burning are taken into account together with the rate equations scheme. Results show with QD excited state and wetting layer serving as dual-reservoir of carriers, as well as the ultra fast carrier relaxation of the QD device, this scheme is suitable for high speed Boolean logic operations. Logic operation can be carried out up to speed of 250 Gb/s. (C) 2010 Optical Society of America
引用
收藏
页码：6417 / 6422
页数：6
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