Photoluminescence limiting of colloidal PbS quantum dots

被引：8

作者：

Ullrich, B. ^{[1
,2
]}

Xi, H. ^{[3
]}

Wang, J. S. ^{[4
]}

机构：

[1] Univ Nacl Autonoma Mexico, Inst Ciencias Fis, Cuernavaca 62210, Morelos, Mexico

[2] Ullrich Photon LLC, Wayne, OH 43466 USA

[3] Bowling Green State Univ, Dept Phys & Astron, Bowling Green, OH 43403 USA

[4] US Air Force, Res Lab, Mat & Mfg Directorate, Wright Patterson AFB, OH 45433 USA

来源：

APPLIED PHYSICS LETTERS | 2016年 / 108卷 / 08期

关键词：

Photoluminescence - Continuous wave lasers - IV-VI semiconductors - Lead compounds - Semiconductor quantum dots - Nanocrystals - Sulfur compounds - Quantum dot lasers;

D O I：

10.1063/1.4942608

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The exposure of colloidal 2 nm PbS quantum dots to growing continuous wave laser excitation at 532 nm increases the photoluminescence intensity with the square root of the optical stimulus. The results herein in conjunction with previous findings [B. Ullrich and H. Xi, Opt. Lett. 38, 4698 (2013)] advocate the square root trend to be the general limiting function for photo-carrier transport and emission of optically excited nano-sized materials. We further show that the excitation of one electron-hole pair per quantum dot defines the saturation threshold for photoluminescence intensity and dynamic band filling. (C) 2016 AIP Publishing LLC.

引用

页数：3

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