Effect of graded base p-doping on MIM performance

被引：0

作者：

Wernsman, B ^{[1
]}

Wehrer, RJ ^{[1
]}

Wilt, DM ^{[1
]}

Smith, RW ^{[1
]}

Siergiej, RR ^{[1
]}

Schmuck, GP ^{[1
]}

Ju, I ^{[1
]}

Geller, CB ^{[1
]}

机构：

[1] Bechtel Bettis Inc, W Mifflin, PA 15122 USA

来源：

THERMOPHOTOVOLTAIC GENERATION OF ELECTRICITY | 2003年 / 653卷

关键词：

D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

0.6 eV InGaAs/InPAs double heterostructure n/p/n tunnel junction monolithic interconnected modules (TJ-MIMs) having p-type bases doped uniformly at 2x10(17) cm(-3) and inhomogeneously graded from 4x10(16) cm(-3) to 4x10(17) cm(-3) (10:1 doping ratio) were grown, processed, and characterized. The electrical performance of the devices with inhomogeneously graded bases was higher than that of the uniformly doped case due to the built-in electric field in the base region, making QE(int) and J(SC) larger. The free carrier absorption increased due to the relatively higher doping levels for the linearly doped case but remained unchanged for the exponential profile. Therefore, results showed that exponentially grading the base p-type doping increased the MIM performance by similar to8% (relative).

引用

页码：488 / 497

页数：10