Electronic structure of the high-temperature Ge(100) surface studied by valence band photoemission

被引：10
作者：
Santoni, A
Dhanak, VR
机构：
[1] ENEA CR Frascati, I-0044 Frascati, Italy
[2] INFM, TASC, I-34012 Trieste, Italy
[3] Univ Liverpool, Dept Phys, Liverpool L69 3BX, Merseyside, England
[4] SERC, Daresbury Lab, Warrington WA4 4AD, Cheshire, England
来源：
SURFACE SCIENCE | 2003年 / 537卷 / 1-3期
关键词：
synchrotron radiation photoelectron spectroscopy; surface thermodynamics (including phase transitions); surface melting; germanium; low index single crystal surfaces;
D O I：
10.1016/S0039-6028(03)00693-9
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
The electronic structure of the Ge(100) surface has been investigated by means of synchrotron radiation valence band photoemission in a temperature range spanning from room temperature to 1190 K close to the bulk melting temperature. The surface is observed to become increasingly metallic up to the (2 x 1) to (1 x 1) phase transition temperature which takes place at about 960 K. Above this temperature the electronic structure of the surface does not change appreciably, indicating the persistence of a dimerized and disordered surface up to temperatures close to the melting point. (C) 2003 Elsevier Science B.V. All rights reserved.
引用
收藏
页码：L423 / L428
页数：6
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