Origin of surface conductivity in diamond

被引：858

作者：

Maier, F ^{[1
]}

Riedel, M ^{[1
]}

Mantel, B ^{[1
]}

Ristein, J ^{[1
]}

Ley, L ^{[1
]}

机构：

[1] Univ Erlangen Nurnberg, Phys Tech Inst, D-91058 Erlangen, Germany

来源：

PHYSICAL REVIEW LETTERS | 2000年 / 85卷 / 16期

关键词：

D O I：

10.1103/PhysRevLett.85.3472

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Hydrogen-terminated diamond exhibits a high surface conductivity (SC) that is commonly attributed to the direct action of hydrogen-related accepters. We give experimental evidence that hydrogen is only a necessary requirement for SC; exposure to air is also essential. We propose a mechanism in which a redox reaction in an adsorbed water layer provides the electron sink for the subsurface hole accumulation layer. The model explains the experimental findings including the fact that hydrogenated diamond is unique among all semiconductors in this respect.

引用

页码：3472 / 3475

页数：4

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