Inx(GayAl1-y)1-xAs quaternary alloys for quantum dot intermediate band solar cells

被引：13

作者：

Linares, P. G. ^{[1
]}

Farmer, C. D.

Antolin, E. ^{[1
]}

Chakrabarti, S.

Sanchez, A. M.

Ben, T.

Molina, S. I.

Stanley, C. R.

Marti, A. ^{[1
]}

Luque, A. ^{[1
]}

机构：

[1] Univ Politecn Madrid, Inst Energia Solar, Ciudad Univ Sn, E-28040 Madrid, Spain

来源：

PROCEEDINGS OF INORGANIC AND NANOSTRUCTURED PHOTOVOLTAICS | 2010年 / 2卷 / 01期

关键词：

solar cell; Intermediate band; quantum dots; III-V quaternary materials; band alignment; EFFICIENCY; PARAMETERS; DESIGN;

D O I：

10.1016/j.egypro.2010.07.019

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

Within the context of quantum dot Intermediate Band Solar Cells (QD-IBSC), it is of interest to investigate the maximum value that can be achieved for the smaller of the transitions (E-L), since values larger than 0.3 eV are required for improved performance. This work provides both theoretical and experimental arguments to verify the shift of the IB position to deeper energies by using an In-x(GayAl1-y)(1-x)As capping layer, fulfilling the double function of increasing the QD size and eliminating the discontinuity in the conduction band between the quaternary cap and the GaAs barrier. (C) 2010 Published by Elsevier Ltd

引用

页码：133 / 141

页数：9

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