Twinning in GaAs nanowires on patterned GaAs(111)B

被引：2
作者：
Walther, Thomas [1 ,2 ]
Krysa, Andrey B. [2 ,3 ]
机构：
[1] Univ Sheffield, Dept Elect & Elect Engn, Kroto Ctr High Resolut Imaging & Anal, Sheffield S1 3JD, S Yorkshire, England
[2] Univ Sheffield, Dept Elect & Elect Engn, Semicond Mat & Devices Grp, Sheffield S1 3JD, S Yorkshire, England
[3] Univ Sheffield, Natl Ctr Technol 3 5, Sheffield S3 7HQ, S Yorkshire, England
来源：
CRYSTAL RESEARCH AND TECHNOLOGY | 2015年 / 50卷 / 01期
关键词：
GaAs; nanowires; transmission electron microscopy; annular dark field; electron energy-loss spectroscopy; BAND-GAP; GROWTH; SUPERLATTICES;
D O I：
10.1002/crat.201400166
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We have studied twinning in GaAs nanowires grown via holes in a silica mask deposited on GaAs(111)B substrates by metal-organic chemical vapour epitaxy without catalysts. Twins perpendicular to the growth direction form in the nanowires, their {111}-type side facets leading to corrugation of their {110} side walls. The top facets are almost atomically smooth. Aberration corrected annular dark-field scanning transmission electron microscopy reveals all twins are rotational, commencing with layers of Ga and finishing with As atoms. Energy-loss spectroscopic profiling has shown no significant changes in the band-gap or bulk plasmon energy at those twin boundaries, and the observed reduction of the interface plasmon energy by approximate to 0.13eV is close to the detection limit of the technique, reflecting the very low energetic electronic changes related to twin formation.
引用
收藏
页码：62 / 68
页数：7
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