Influence of an in-plane electric field on exciton fine structure in InAs-GaAs self-assembled quantum dots -: art. no. 041907

被引：132
作者：
Kowalik, K
Krebs, O
Lemaître, A
Laurent, S
Senellart, P
Voisin, P
Gaj, JA
机构：
[1] CNRS, Lab Photon & Nanostruct, F-91460 Marcoussis, France
[2] Univ Warsaw, Inst Expt Phys, PL-00681 Warsaw, Poland
来源：
APPLIED PHYSICS LETTERS | 2005年 / 86卷 / 04期
关键词：
D O I：
10.1063/1.1855409
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The influence of an in-plane electric field on the optical properties of single quantum dots is investigated. On a sample containing a plane of InAs/GaAs dots, micrometer-size electro-optical structures were produced in order to apply an external electric field in the dot plane. A large decrease of the anisotropic exchange splitting, correlated with the in-plane Stark shift, is observed. (C) 2005 American Institute of Physics.
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页码：041907 / 1
页数：3
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