Xenon migration behaviour in titanium nitride

被引:20
作者
Gavarini, S.
Toulhoat, N.
Peaucelle, C.
Martin, P.
Mende, J.
Pipon, Y.
Jaffrezic, H.
机构
[1] IPN, UMR 5822, F-69622 Villeurbanne, France
[2] Ctr Etud Cadarache, DEN, DEC, SESC,LLCC, F-13108 St Paul Les Durance, France
关键词
D O I
10.1016/j.jnucmat.2007.01.239
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Titanium nitride is one of the inert matrixes proposed to surround the fuel in gas cooled fast reactor (GFR) systems. These reactors operate at high temperature and necessitate refractory materials presenting a high chemical stability and good mechanical properties. A total retention of the most volatile fission products, such as Xe, I or Cs, by the inert matrix is needed during the in pile process. The thermal migration of xenon in TiN was studied by implanting 800 keV Xe++ ions in sintered samples at an ion fluence of 5 x 10(15) cm(-2). Annealing was performed at temperatures ranging from 1673 to 1923 K for 1 and 3 h. Xenon concentration profiles were studied by Rutherford backscattering spectrometry (RBS) using 2.5 MeV alpha-particles. The migration behaviour of xenon corresponds to a gas migration model. It is dominated by a surface directed transport with a slight diffusion component. The mean activation energy corresponding to the diffusion component was found to be 2.2 +/- 0.3 eV and corresponds to the Brownian motion of xenon bubbles. The directed Xe migration can be interpreted in term of bubble transport using Evans model. This last process is mostly responsible for xenon release from TiN. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:364 / 373
页数:10
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