CMOS-MEMS Force Microsensor for Magnetic Resonance Detection

被引：0

作者：

McFeetors, G. ^{[1
]}

Okoniewski, M. ^{[1
]}

机构：

[1] Univ Calgary, Dept Elect & Comp Engn, Calgary, AB, Canada

来源：

ICEAA: 2009 INTERNATIONAL CONFERENCE ON ELECTROMAGNETICS IN ADVANCED APPLICATIONS, VOLS 1 AND 2 | 2009年

关键词：

D O I：

暂无

中图分类号：

TP301 [理论、方法];

学科分类号：

081202 ;

摘要：

An integrated MEMS-in-CMOS force and magnetic field sensor is described, which has been designed, fabricated and tested. This device uses a force-displaced mechanical mass, a capacitive displacement detector, and a low-noise CMOS amplifier to detect force and magnetic field. The entire device is fabricated on a 0.18 mu m CMOS die using a maskless micromachining fabrication process. Measurements show that the device is capable of a sensitivity of 260mV/uN at atmospheric pressure.

引用

页码：1006 / 1009

页数：4