Electron transport in strained-silicon directly on insulator ultrathin-body n-MOSFETs with body thickness ranging from 2 to 25 nm

被引：44

作者：

Gomez, Leonardo ^{[1
]}

Aberg, I. ^{[1
]}

Hoyt, J. L. ^{[1
]}

机构：

[1] MIT, Microsyst Technol Labs, Cambridge, MA 02139 USA

来源：

IEEE ELECTRON DEVICE LETTERS | 2007年 / 28卷 / 04期

基金：

美国国家科学基金会;

关键词：

mobility; silicon-on-insulator (SOI); strained-Si; strained-Si directly on insulator (SSDOI); ultrathin body (UTB) MOSFET;

D O I：

10.1109/LED.2007.891795

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The electron effective mobility in ultrathin-body n-channel metal-oxide-semiconductor field-effect transistors fabricated on Ge-free 30% strained-Si directly on insulator (SSDOI) is mapped as the body thickness is scaled. Effective mobility and device body thickness were extracted using current-voltage and gate-to-channel capacitance-voltage measurements as well as cross-sectional transmission electron microscopy. Devices with body thicknesses ranging from 2 to 25 nm are studied. Significant mobility enhancements (similar to 1.8x) compared to unstrained SOI are observed for 30% SSDOI with body thicknesses of above 3.5 nm. The mobility exhibits a sharp drop as the body thickness is scaled below 3.5 nm.

引用

页码：285 / 287

页数：3

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