Inductively coupled plasma etching of InGaP, AlInP, and AlGaP in Cl2 and BCl3 chemistries

被引：6

作者：

Hong, J ^{[1
]}

Lambers, ES

Abernathy, CR

Pearton, SJ

Shul, RJ

Hobson, WS

机构：

[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA

[2] AT&T Bell Labs, Lucent Technol, Murray Hill, NJ 07974 USA

[3] Sandia Natl Labs, Albuquerque, NM 87185 USA

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1998年 / 27卷 / 03期

关键词：

AlGaP; AlInP; InGaP; plasma etching;

D O I：

10.1007/s11664-998-0203-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Dry etching of InGaP, AlInP, and AlGaP in inductively coupled plasmas (ICP) is reported as a function of plasma chemistry (BCl3 or Cl-2, with additives of Ar, N-2, or H-2), source power, radio frequency chuck power, and pressure. Smooth anisotropic pattern transfer at peak etch rates of 1000-2000 Angstrom.min(-1) is obtained at low DC self-biases (-100V dc) and pressures (2 mTorr). The etch mechanism is characterized by a trade-off between supplying sufficient active chloride species to the surface to produce a strong chemical enhancement of the etch rate, and the efficient removal of the chlorinated etch products before a thick selvedge layer is formed. Cl-2 produces smooth surfaces over a wider range of conditions than does BCl3.

引用

页码：132 / 137

页数：6