Two-photon optical-beam-induced current solid-immersion imaging of a silicon flip chip with a resolution of 325 nm

被引：33
作者：
Ramsay, E [1 ]
Pleynet, N
Xiao, D
Warburton, RJ
Reid, DT
机构：
[1] Heriot Watt Univ, Sch Engn & Phys Sci, Ultrafast Opt Grp, Edinburgh EH14 4AS, Midlothian, Scotland
[2] Heriot Watt Univ, Sch Engn & Phys Sci, Nano Opt Grp, Edinburgh EH14 4AS, Midlothian, Scotland
来源：
OPTICS LETTERS | 2005年 / 30卷 / 01期
基金：
英国工程与自然科学研究理事会;
关键词：
D O I：
10.1364/OL.30.000026
中图分类号：
O43 [光学];
学科分类号：
070207 ; 0803 ;
摘要：
We report high-resolution subsurface imaging of a silicon flip chip by detection of the photocurrent generated by the two-photon absorption of 1530-nm light from a femtosecond Er:fiber laser. The technique combines the focal sensitivity of two-photon excitation with the enhanced optical resolution of high-numerical-aperture solid-immersion imaging. Features on a sub-1-mum scale are clearly resolvable with high contrast, showing a resolution of 325 nm. (C) 2005 Optical Society of America.
引用
收藏
页码：26 / 28
页数：3
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