Unraveling Ferroelectric Polarization and Ionic Contributions to Electroresistance in Epitaxial Hf0.5Zr0.5O2 Tunnel Junctions

被引：51

作者：

Cervo Sulzbach, Milena ^{[1
]}

Estandia, Saul ^{[1
]}

Long, Xiao ^{[1
]}

Lyu, Jike ^{[1
]}

Dix, Nico ^{[1
]}

Gazquez, Jaume ^{[1
]}

Chisholm, Matthew F. ^{[2
]}

Sanchez, Florencio ^{[1
]}

Fina, Ignasi ^{[1
]}

Fontcuberta, Josep ^{[1
]}

机构：

[1] Inst Ciencia Mat Barcelona, Campus UAB, Bellaterra 08193, Catalonia, Spain

[2] Oak Ridge Natl Lab, Ctr Nanophase Mat Sci, Oak Ridge, TN 37831 USA

来源：

ADVANCED ELECTRONIC MATERIALS | 2020年 / 6卷 / 01期

关键词：

ferroelectric tunnel junctions; hafnium oxides; Hf-0; 5Zr(0); 5O(2); resistive switching; tunnel electroresistance; GIANT ELECTRORESISTANCE; OXIDE;

D O I：

10.1002/aelm.201900852

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Tunnel devices based on ferroelectric Hf0.5Zr0.5O2 (HZO) barriers hold great promises for emerging data storage and computing technologies. The resistance state of the device can be changed through use of a suitable writing voltage. However, the microscopic mechanisms leading to the resistance change are an intricate interplay between ferroelectric polarization controlled barrier properties and defect-related transport mechanisms. The fundamental role of the microstructure of HZO films determining the balance between those contributions is demonstrated. The HZO film presents coherent or incoherent grain boundaries, associated to the coexistance of monoclinic and orthorhombic phases, which are dictated by the mismatch with the substrates for epitaxial growth. These grain boundaries are the toggle that allows to obtain either large (up to approximate to 450%) and fully reversible genuine polarization controlled electroresistance when only the orthorhombic phase is present or an irreversible and extremely large (approximate to 10(3)-10(5)%) electroresistance when both phases coexist.

引用

页数：8

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