Device assessment of the electrical activity of threading dislocations in strained Ge epitaxial layers

被引：6

作者：

Simoen, E. ^{[1
]}

Brouwers, G. ^{[1
]}

Eneman, G. ^{[1
]}

Gonzalez, M. Bargallo ^{[1
]}

De Jaeger, B. ^{[1
]}

Mitard, J. ^{[1
]}

Brunco, D. P. ^{[1
]}

Souriau, L. ^{[1
]}

Cody, N. ^{[2
]}

Thomas, S. ^{[2
]}

Meuris, M. ^{[1
]}

机构：

[1] IMEC, B-3001 Leuven, Belgium

[2] ASM Amer, Phoenix, AZ USA

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2008年 / 11卷 / 5-6期

关键词：

Threading dislocations; Leakage current; Inversion layer mobility; Strained germanium; Defect annealing;

D O I：

10.1016/j.mssp.2008.08.002

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

It is shown that the high density of threading dislocations (TDs) and, more specifically, the high density of point defects associated with it and present in our strained Ge epitaxial layers on a Si0.2Ge0.8 relaxed buffer layer degrades the mobility and the leakage current of pMOSFETs and p(+)n junctions fabricated therein. Annealing in the range 550-650 degrees C prior to gate stack deposition improves the device performance, although there is no marked change in the TD density. From this, it is concluded that the annealing may reduce the density of point defects grown in during the epitaxial deposition. (C) 2008 Elsevier Ltd. All rights reserved.

引用

收藏

页码：364 / 367

页数：4

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