Label Free Detection of Biomolecules Using Charge-Plasma-Based Gate Underlap Dielectric Modulated Junctionless TFET

被引:90
作者
Wadhwa, Girish [1 ]
Raj, Balwinder [1 ]
机构
[1] NIT Jalandhar, Dept Elect & Commun Engn, Nanoelect Res Lab, Jalandhar, India
关键词
Dielectric modulation (DM); tunnel FET; dual material gate (DMG); sensitivity; biosensor; FIELD-EFFECT TRANSISTOR;
D O I
10.1007/s11664-018-6343-1
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Nanoscale devices are emerging as a platform for detecting biomolecules. Various issues were observed during the fabrication process such as random dopant fluctuation and thermal budget. To reduce these issues charge-plasma-based concept is introduced. This paper proposes the implementation of charge-plasma-based gate underlap dielectric modulated junctionless tunnel field effect transistor (DM-JLTFET) for the revelation of biomolecule immobilized in the open cavity gate channel region. In this p+ source and n+ drain regions are introduced by employing different work function over the intrinsic silicon. Also dual material gate architecture is implemented to reduce short channel effect without abandoning any other device characteristic. The sensitivity of biosensor is studied for both the neutral and charge-neutral biomolecules. The effect of device parameters such as channel thickness, cavity length and cavity thickness on drain current have been analyzed through simulations. This paper investigates the performance of charge-plasma-based gate underlap DM-JLTFET for biomolecule sensing applications while varying dielectric constant, charge density at different biasing conditions.
引用
收藏
页码:4683 / 4693
页数:11
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