Fabrication and emission characteristics of GaAs tip and wedge-shaped field emitter arrays by wet etching

被引：9

作者：

Ducroquet, F ^{[1
]}

Kropfeld, P ^{[1
]}

Yaradou, O ^{[1
]}

Vanoverschelde, A ^{[1
]}

机构：

[1] Univ Lille 1, Inst Elect & Microelect Nord, CNRS, UMR 9929, F-59652 Villeneuve Dascq, France

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1998年 / 16卷 / 02期

关键词：

D O I：

10.1116/1.589905

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

GaAs tip and wedge-shaped field emitter arrays were fabricated by a wet etching technique on a (100) GaAs substrate. Two chemical solutions whose compositions were chosen for their isotropy features were investigated: HCl:H2O2:H2O (40:4:1) and HF:HNO3:H2O (1:1:2). When progressively polarized and after a working period of stabilization, the GaAs tip or wedge arrays are found to supply a stable emission current, with fluctuations not exceeding 3% over some hours. The analysis of the surface before emission shows the presence of a thin oxide layer which is suggested to act as a passivation layer. (C) 1998 American Vacuum Society. [S0734-211X(98)04402-3].

引用

页码：787 / 789

页数：3

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