ZnO and ZnMgO growth on a-plane sapphire by molecular beam epitaxy

被引：89

作者：

Ogata, K ^{[1
]}

Koike, K

Tanite, T

Komuro, T

Yan, F

Sasa, S

Inoue, M

Yano, M

机构：

[1] Osaka Inst Technol, Bio Venture Ct5r, Asahi Ku, Osaka 5358585, Japan

[2] Osaka Inst Technol, New Mat Res Ctr, Osaka 5358585, Japan

来源：

JOURNAL OF CRYSTAL GROWTH | 2003年 / 251卷 / 1-4期

关键词：

photoluminescence; reflection high energy electron diffraction; molecular beam epitaxy; oxides; semiconducting II-VI materials; biosensor;

D O I：

10.1016/S0022-0248(02)02277-7

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Growth of ZnO and ZnMgO layers by molecular beam epitaxy was conducted toward biosensing application. Oxygen polar (-c) ZnO layers were grown with oxygen termination, while irradiation of Zn beam made the Zn-terminated surface. Luminescent energy of ZnMgO shifted as high as 3.65 eV by increasing Mg composition. Electron carrier densities and mobilities of ZnO and ZnMgO were around 3 x 10(17) cm(-3) and 100 cm(2)/V s, respectively. (C) 2002 Elsevier Science B.V. All rights reserved.

引用

页码：623 / 627

页数：5

共 23 条

[1] Plasma assisted molecular beam epitaxy of ZnO on c-plane sapphire: Growth and characterization [J].

Chen, YF ;

Bagnall, DM ;

Koh, HJ ;

Park, KT ;

Hiraga, K ;

Zhu, ZQ ;

Yao, T .

JOURNAL OF APPLIED PHYSICS, 1998, 84 (07) :3912-3918

[2] Plasma-assisted molecular beam epitaxy for ZnO based II-VI semiconductor oxides and their heterostructures [J].

Chen, YF ;

Ko, HJ ;

Hong, SK ;

Sekiuchi, T ;

Yao, T ;

Segawa, Y .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2000, 18 (03) :1514-1517

[3] Realization of band gap above 5.0 eV in metastable cubic-phase MgxZn1-xO alloy films [J].

Choopun, S ;

Vispute, RD ;

Yang, W ;

Sharma, RP ;

Venkatesan, T ;

Shen, H .

APPLIED PHYSICS LETTERS, 2002, 80 (09) :1529-1531

[4]

Hong SK, 2002, PHYS STATUS SOLIDI B, V229, P803, DOI 10.1002/1521-3951(200201)229:2<803::AID-PSSB803>3.0.CO

[5]

2-R

[6]

Iwata K, 2000, PHYS STATUS SOLIDI A, V180, P287, DOI 10.1002/1521-396X(200007)180:1<287::AID-PSSA287>3.0.CO

[7]

2-7

[8] MBE growth and properties of ZnO on sapphire and SiC substrates [J].

Johnson, MAL ;

Fujita, S ;

Rowland, WH ;

Hughes, WC ;

Cook, JW ;

Schetzina, JF .

JOURNAL OF ELECTRONIC MATERIALS, 1996, 25 (05) :855-862

[9] Single-crystalline ZnO films grown on (0001)Al2O3 substrate by electron cyclotron resonance-assisted molecular beam epitaxy technique [J].

Kang, HB ;

Nakamura, K ;

Yoshida, K ;

Ishikawa, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1997, 36 (7B) :L933-L935

[10] Spectroscopic ellipsometry study of Zn1-xMgxO thin films deposited on Al2O3(0001) [J].

Kang, JH ;

Park, YR ;

Kim, KJ .

SOLID STATE COMMUNICATIONS, 2000, 115 (03) :127-130

← 1 2 3 →