Phonon-Mediated Electron Transport through CaO Thin Films

被引：14

作者：

Cui, Yi ^{[1
]}

Tosoni, Sergio ^{[2
]}

Schneider, Wolf-Dieter ^{[1
,3
]}

Pacchioni, Gianfranco ^{[2
]}

Nilius, Niklas ^{[1
,4
]}

Freund, Hans-Joachim ^{[1
]}

机构：

[1] Max Planck Gesell, Fritz Haber Inst, D-14195 Berlin, Germany

[2] Univ Milano Bicocca, Dipartimento Sci Mat, I-20125 Milan, Italy

[3] Ecole Polytech Fed Lausanne, Inst Phys, CH-1015 Lausanne, Switzerland

[4] Carl von Ossietzky Univ Oldenburg, Inst Phys, D-26111 Oldenburg, Germany

来源：

PHYSICAL REVIEW LETTERS | 2015年 / 114卷 / 01期

关键词：

SINGLE-MOLECULE; CALCIUM-OXIDE; AB-INITIO; MGO;

D O I：

10.1103/PhysRevLett.114.016804

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Scanning tunneling microscopy has developed into a powerful tool for the characterization of conductive surfaces, for which the overlap of tip and sample wave functions determines the image contrast. On insulating layers, as the CaO thin film grown on Mo(001) investigated here, direct overlap between initial and final states is not enabled anymore and electrons are transported via hopping through the conductionband states of the oxide. Carrier transport is accompanied by strong phonon excitations in this case, imprinting an oscillatory signature on the differential conductance spectra of the system. The phonons show a characteristic spatial dependence and become softer around lattice irregularities in the oxide film, such as dislocation lines.

引用

页数：5

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