Dielectric properties of thin films of partially deuterated betaine phosphite with large- and small-block structures

Ferroelectric thin films of partially deuterated betaine phosphite (DBPI) have been grown by evaporation on NdGaO3 substrates with a preliminarily deposited structure of interdigitated electrodes. The block structure of the films is a texture in which the polar axis b is oriented in the plane of the film and the a* axis is perpendicular to this plane. Typical dimensions of the single-crystal blocks in DBPI films substantially exceeds the distance between the interdigitated electrodes (d = 50 mu m). However, DBPI films in which the block structure has characteristic dimensions of the order of d have also been grown. Investigations of the dielectric properties of the films have demonstrated that the dimensions of the block structure have little effect on the behavior of a small-signal dielectric response, which, in the phase transition region, is characterized by a strong anomaly of the capacitance of the structure at T = T (c) and by a glass-like behavior of the capacitance C and dielectric loss tangent tan delta in the temperature range of 120-200 K. By contrast, the low-frequency strong-signal dielectric response (dielectric hysteresis loops) in the structures with small blocks differs significantly from that observed for large-block structures. The difference in the frequency behavior of the hysteresis loops in the large-block and small-block structures is associated with the limitation of motion of domain walls in the case of small blocks.