Structural and electrical characterizations of single tetragonal FeSe on Si substrate

被引：32

作者：

Wu, X. J.

Zhang, Z. Z.

Zhang, J. Y.

Ju, Z. G.

Shen, D. Z.

Li, B. H.

Shan, C. X.

Lu, Y. M.

机构：

[1] Chinese Acad Sci, Changchun Inst Opt Fine Mech & Phys, Key Lab Excited State Proc, Changchun 130033, Peoples R China

[2] Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China

来源：

JOURNAL OF CRYSTAL GROWTH | 2007年 / 300卷 / 02期

基金：

中国国家自然科学基金;

关键词：

crystal structure; X-ray diffraction; metal organic chemical vapor deposition; magnetic materials;

D O I：

10.1016/j.jcrysgro.2006.12.048

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

(001)-Oriented FeSe thin films were successfully fabricated by metal organic chemical vapor deposition on Si substrate with large thermal mismatch. X-ray diffraction and X-ray photoelectron spectroscopy measurements indicate that the films are of single tetragonal phase FeSe. Hysteresis loop indicates that the FeSe structure is ferromagnetic at room temperature with coercive force of 260Oe. The FeSe films show p-type conduction with carrier concentration of 10(21) cm(-3), and the anomalous Hall effect was discussed. (c) 2007 Elsevier B.V. All rights reserved.

引用

页码：483 / 485

页数：3

共 10 条

[1] Two-carrier transport in epitaxially grown MnAs [J].

Berry, JJ ;

Potashnik, SJ ;

Chun, SH ;

Ku, KC ;

Schiffer, P ;

Samarth, N .

PHYSICAL REVIEW B, 2001, 64 (05)

[2] ELECTRONIC ANALOG OF THE ELECTROOPTIC MODULATOR [J].

DATTA, S ;

DAS, B .

APPLIED PHYSICS LETTERS, 1990, 56 (07) :665-667

[3] Ferromagnetic FeSe: Structural, electrical, and magnetic properties [J].

Feng, QJ ;

Shen, DZ ;

Zhang, JY ;

Li, BS ;

Li, BH ;

Lu, YM ;

Fan, XW ;

Liang, HW .

APPLIED PHYSICS LETTERS, 2006, 88 (01)

[4] Structural and magnetic properties of epitaxially grown MnAs films on GaAs(110) -: art. no. 092505 [J].

Kolovos-Vellianitis, D ;

Herrmann, C ;

Däweritz, L ;

Ploog, KH .

APPLIED PHYSICS LETTERS, 2005, 87 (09)

[5] Large anomalous Hall effect in a silicon-based magnetic semiconductor [J].

Manyala, N ;

Sidis, Y ;

Ditusa, JF ;

Aeppli, G ;

Young, DP ;

Fisk, Z .

NATURE MATERIALS, 2004, 3 (04) :255-262

[6] Magnetic semiconductors - Silicon-based spintronics [J].

Pearton, S .

NATURE MATERIALS, 2004, 3 (04) :203-204

[7] Enhanced tunneling magnetoresistance in Fe/ZnSe double junctions:: Ab initio calculations [J].

Peralta-Ramos, J. ;

Llois, A. M. .

PHYSICAL REVIEW B, 2006, 73 (21)

[8] HYBRID FERROMAGNETIC-SEMICONDUCTOR STRUCTURES [J].

PRINZ, GA .

SCIENCE, 1990, 250 (4984) :1092-1097

[9] Magnetic behavior of Fe(001)/ZnSe(001)/Fe(001) sandwiches grown on ZnSe(001) epilayer on GaAs(001) [J].

Varalda, J ;

Ribeiro, GAP ;

Ortiz, WA ;

de Oliveira, AJA ;

Mosca, DH ;

Etgens, VH ;

Eddrief, M .

PHYSICA B-CONDENSED MATTER, 2002, 322 (3-4) :312-314

[10] Spintronics:: A spin-based electronics vision for the future [J].

Wolf, SA ;

Awschalom, DD ;

Buhrman, RA ;

Daughton, JM ;

von Molnár, S ;

Roukes, ML ;

Chtchelkanova, AY ;

Treger, DM .

SCIENCE, 2001, 294 (5546) :1488-1495

← 1 →