Finite element simulations of compositionally graded InGaN solar cells

被引：182

作者：

Brown, G. F. ^{[1
]}

Ager, J. W., III ^{[2
]}

Walukiewicz, W. ^{[2
]}

Wu, J. ^{[1
,2
]}

机构：

[1] Univ Calif Berkeley, Dept Mat Sci & Engn, Berkeley, CA 94720 USA

[2] Lawrence Berkeley Natl Lab, Div Mat Sci, Berkeley, CA 94720 USA

来源：

SOLAR ENERGY MATERIALS AND SOLAR CELLS | 2010年 / 94卷 / 03期

基金：

美国国家科学基金会;

关键词：

Device modeling; InGaN; Composition grading; Heterojunction; BAND DISCONTINUITIES; EFFECTIVE-MASS; GAP; INN; LIFETIME;

D O I：

10.1016/j.solmat.2009.11.010

中图分类号：

TE [石油、天然气工业]; TK [能源与动力工程];

学科分类号：

0807 ; 0820 ;

摘要：

The solar power conversion efficiency of compositionally graded InxGa1-xN solar cells was simulated using a finite element approach. Incorporating a compositionally graded region on the InGaN side of a p-GaN/n-InxGa1-xN heterojunction removes a barrier for hole transport into GaN and increases the cell efficiency. The design also avoids many of the problems found to date in homojunction cells as no p-type high-In content region is required. Simulations predict 28.9% efficiency for a p-GaN/n-InxGa1-xN/n-In0.5Ga0.5N/p-Si/n-Si tandem structure using realistic material parameters. The thickness and doping concentration of the graded region was found to substantially affect the performance of the cells. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：478 / 483

页数：6

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