Vertical stack reliability of GaN-on-Si buffers for low-voltage applications

被引：3

作者：

Fabris, E. ^{[1
]}

Borga, M. ^{[1
]}

Posthuma, N. ^{[1
]}

Zhao, M. ^{[1
]}

De Jaeger, B. ^{[1
]}

You, S. ^{[1
]}

Decoutere, S. ^{[1
]}

Meneghini, M. ^{[2
]}

Meneghesso, G. ^{[2
]}

Zanoni, E. ^{[2
]}

机构：

[1] IMEC, Interuniv Microelect Ctr, Leuven, Belgium

[2] Univ Padua, Dept Informat Engn, Padua, Italy

来源：

2021 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) | 2021年

关键词：

Gallium nitride; HEMTs; low-voltage buffers; vertical reliability; LEAKAGE CURRENT; SILICON;

D O I：

10.1109/IRPS46558.2021.9405097

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

In this paper the reliability of the vertical GaN-on-Si stack for lateral p-GaN HEMTs dedicated to low voltage applications is discussed in detail by comparing wafers with different buffer thicknesses and growth condition of the MN nucleation layer. The vertical robustness and the time-dependent vertical breakdown will be investigated in detail, demonstrating that the buffers with reduced thickness are suitable for 100 V applications. Moreover, the voltage drop on the different layers of the vertical stack will be extracted at the breakdown, and a model able to explain the degradation of the vertical stack will be proposed.

引用

页数：8

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