Control of Electron Transport in Two-Dimensional Array of Si Nanodisks for Spiking Neuron Device

被引：10

作者：

Igarashi, Makoto ^{[1
,3
]}

Huang, Chi-Hsien ^{[1
,3
]}

Morie, Takashi ^{[2
]}

Samukawa, Seiji ^{[1
,3
]}

机构：

[1] Tohoku Univ, Inst Fluid Sci, Aoba Ku, Sendai, Miyagi 9808577, Japan

[2] Kyushu Inst Technol, Grad Sch Life Sci & Syst Engn, Kitakyushu, Fukuoka 8080196, Japan

[3] Japan Sci & Technol Agcy, CREST, Tokyo 1020075, Japan

来源：

APPLIED PHYSICS EXPRESS | 2010年 / 3卷 / 08期

关键词：

QUANTUM DOTS; CONDUCTIVITY; CIRCUIT; MODELS;

D O I：

10.1143/APEX.3.085202

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We fabricated a device with a two-dimensional Si-nanodisk array (2D ND array) with spiking neurons The 2D ND array was prepared using a 2D array of iron-oxide cores as a uniform mask and a defect-free chlorine neutral beam as an etcher The transformation from a pulse input signal (voltage) to a decayed analog output (current) was clearly observed, which may have resulted from the random hopping of electrons in the 2D ND array Additionally, these analog outputs could be integrated in this 2D array by applying consecutive pulse inputs (C) 2010 The Japan Society of Applied Physics

引用

页数：3

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