Proton Irradiation Effects on the Time-Dependent Dielectric Breakdown Characteristics of Normally-Off AlGaN/GaN Gate-Recessed Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors

被引：1
|
作者：
Keum, Dongmin [1 ]
Kim, Hyungtak [1 ]
机构：
[1] Hong Univ, Sch Elect & Elect Engn, Seoul 04066, South Korea
来源：
MICROMACHINES | 2019年 / 10卷 / 11期
基金：
新加坡国家研究基金会;
关键词：
AlGaN/GaN; proton irradiation; time-dependent dielectric breakdown (TDDB); reliability; normally off; ELECTRON-MOBILITY; HIGH-VOLTAGE; GAN; HEMTS; CHARGE; SIO2;
D O I：
10.3390/mi10110723
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
In this work, we investigated the time-dependent dielectric breakdown (TDDB) characteristics of normally-off AlGaN/GaN gate-recessed metal-insulator-semiconductor (MIS) heterostructure field effect transistors (HFETs) submitted to proton irradiation. TDDB characteristics of normally-off AlGaN/GaN gate-recessed MISHFETs exhibited a gate voltage (V-GS) dependence as expected and showed negligible degradation even after proton irradiation. However, a capture emission time (CET) map and cathodoluminescence (CL) measurements revealed that the MIS structure was degraded with increasing trap states. A technology computer aided design (TCAD) simulation indicated the decrease of the vertical field beneath the gate due to the increase of the trap concentration. Negligible degradation of TDDB can be attributed to this mitigation of the vertical field by proton irradiation.
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页数：8
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