Proton Irradiation Effects on the Time-Dependent Dielectric Breakdown Characteristics of Normally-Off AlGaN/GaN Gate-Recessed Metal-Insulator-Semiconductor Heterostructure Field Effect Transistors

被引：1

作者：

Keum, Dongmin ^{[1
]}

Kim, Hyungtak ^{[1
]}

机构：

[1] Hong Univ, Sch Elect & Elect Engn, Seoul 04066, South Korea

来源：

MICROMACHINES | 2019年 / 10卷 / 11期

基金：

新加坡国家研究基金会;

关键词：

AlGaN/GaN; proton irradiation; time-dependent dielectric breakdown (TDDB); reliability; normally off; ELECTRON-MOBILITY; HIGH-VOLTAGE; GAN; HEMTS; CHARGE; SIO2;

D O I：

10.3390/mi10110723

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

In this work, we investigated the time-dependent dielectric breakdown (TDDB) characteristics of normally-off AlGaN/GaN gate-recessed metal-insulator-semiconductor (MIS) heterostructure field effect transistors (HFETs) submitted to proton irradiation. TDDB characteristics of normally-off AlGaN/GaN gate-recessed MISHFETs exhibited a gate voltage (V-GS) dependence as expected and showed negligible degradation even after proton irradiation. However, a capture emission time (CET) map and cathodoluminescence (CL) measurements revealed that the MIS structure was degraded with increasing trap states. A technology computer aided design (TCAD) simulation indicated the decrease of the vertical field beneath the gate due to the increase of the trap concentration. Negligible degradation of TDDB can be attributed to this mitigation of the vertical field by proton irradiation.

引用

页数：8

共 34 条

[21] High-Quality ICPCVD SiO2 for Normally Off AlGaN/GaN-on-Si Recessed MOSHFETs [J].

Park, Bong-Ryeol ;

Lee, Jae-Gil ;

Choi, Woojin ;

Kim, Hyungtak ;

Seo, Kwang-Seok ;

Cha, Ho-Young .

IEEE ELECTRON DEVICE LETTERS, 2013, 34 (03) :354-356

[22] Modeling Proton Irradiation in AlGaN/GaN HEMTs: Understanding the Increase of Critical Voltage [J].

Patrick, Erin ;

Law, Mark E. ;

Liu, Lu ;

Cuervo, Camilo Velez ;

Xi, Yuyin ;

Ren, Fan ;

Pearton, Stephen J. .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2013, 60 (06) :4103-4108

[23] Review-Ionizing Radiation Damage Effects on GaN Devices [J].

Pearton, S. J. ;

Ren, F. ;

Patrick, Erin ;

Law, M. E. ;

Polyakov, Alexander Y. .

ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY, 2016, 5 (02) :Q35-Q60

[24]

Reisinger H., 2010, INT RELIAB PHY SYM, P7, DOI DOI 10.1109/IRPS.2010.5488858

[25]

Schroder D.K., 2015, SEMICONDUCTOR MAT DE, P689

[26] Polarization-induced charge and electron mobility in AlGaN/GaN heterostructures grown by plasma-assisted molecular-beam epitaxy [J].

Smorchkova, IP ;

Elsass, CR ;

Ibbetson, JP ;

Vetury, R ;

Heying, B ;

Fini, P ;

Haus, E ;

DenBaars, SP ;

Speck, JS ;

Mishra, UK .

JOURNAL OF APPLIED PHYSICS, 1999, 86 (08) :4520-4526

[27] Prospects for the application of GaN power devices in hybrid electric vehicle drive systems [J].

Su, Ming ;

Chen, Chingchi ;

Rajan, Siddharth .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2013, 28 (07)

[28] High-Performance Normally-Off Al2O3/GaN MOSFET Using a Wet Etching-Based Gate Recess Technique [J].

Wang, Ye ;

Wang, Maojun ;

Xie, Bing ;

Wen, Cheng P. ;

Wang, Jinyan ;

Hao, Yilong ;

Wu, Wengang ;

Chen, Kevin J. ;

Shen, Bo .

IEEE ELECTRON DEVICE LETTERS, 2013, 34 (11) :1370-1372

[29] Displacement Damage Effects in AlGaN/GaN High Electron Mobility Transistors [J].

Weaver, B. D. ;

Martin, P. A. ;

Boos, J. B. ;

Cress, C. D. .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2012, 59 (06) :3077-3080

[30]

Wu TL, 2015, INT RELIAB PHY SYM

← 1 2 3 4 →