Preparation and characterization of indium tin oxide films formed by oxygen ion beam assisted deposition

被引：41
|
作者：
Liu, C
Mihara, T
Matsutani, T
Asanuma, T
Kiuchi, M
机构：
[1] Natl Inst Adv Ind Sci & Technol, Ikeda, Osaka 5638577, Japan
[2] Wuhan Univ, Dept Phys, Wuhan 430072, Peoples R China
来源：
SOLID STATE COMMUNICATIONS | 2003年 / 126卷 / 09期
基金：
日本科学技术振兴机构;
关键词：
indium tin oxide; ion beam assisted deposition;
D O I：
10.1016/S0038-1098(03)00237-0
中图分类号：
O469 [凝聚态物理学];
学科分类号：
070205 ;
摘要：
Indium tin oxide (ITO) films were produced by low-energy oxygen ion beam assisted electron-beam evaporation. The dependence of surface morphology, electrical and optical properties on evaporation rate, oxygen ion beam energy and density, as well as substrate temperatures was characterized by atomic force microscopy, X-ray photoelectron spectroscopy, Hall-effect and optical transmittance measurements. The results show that high-quality ITO films (resistivity of 7.0 X 10(-4) Omega cm, optical transmittance above 85% at wavelength 550 nm, surface roughness of 0.6 nm in root mean square) can be obtained at room temperature. (C) 2003 Elsevier Science Ltd. All rights reserved.
引用
收藏
页码：509 / 513
页数：5
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