Electron transport in a submicron-scale AlGaAs/GaAs field-effect transistor with InAs nanodots as the floating gate

被引：7

作者：

Koike, K ^{[1
]}

Sasa, S ^{[1
]}

Inoue, M ^{[1
]}

Yano, M ^{[1
]}

机构：

[1] Osaka Inst Technol, New Mat Res Ctr, Asahi Ku, Osaka 5358585, Japan

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2003年 / 21卷 / 02期

关键词：

D O I：

10.1116/1.1547748

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electron, transport in a submicron-scale AlGaAs/GaAs field-effect transistor with self-assembled InAs nanodots as the floating gate is studied. Both the memory effect in current-voltage I characteristics and the Coulomb oscillations in transconductance are observed due to the electron trapping at nanodot potentials. Random oscillations in the transconductance in the subthreshold region are also observed due to the Coulomb repulsion by the trapped electrons. (C) 2003 American Vacuum Society.

引用

页码：710 / 713

页数：4

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