Focussed ion beam induced damage in silicon studied by scanning capacitance microscopy

被引：8
|
作者：
Brezna, W
Wanzenböck, H
Lugstein, A
Bertagnolli, E
Gornik, E
Smoliner, J
机构：
[1] TU Wien, Inst Festkorperektr, A-1040 Vienna, Austria
[2] TU Wien, Mikrostrukturzentrum, A-1040 Vienna, Austria
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 2003年 / 18卷 / 04期
关键词：
D O I：
10.1088/0268-1242/18/4/301
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this paper we explore the application of scanning capacitance microscopy (SCM) for studying focussed ion beam (FIB) induced damage in silicon. We qualitatively determine the technologically important beam shape by measuring the SCM image of FIB processed implantation spots, and by comparison of topographical and SCM data. Further, we investigate how deep impinging ions generate measurable damage below the silicon surface. For this purpose, trenches were manufactured using FIB and analysed by SCM in cross-sectional geometry.
引用
收藏
页码：195 / 198
页数：4
相关论文
共 50 条
  • [1] Scanning capacitance microscopy investigations of focused ion beam damage in silicon
    Brezna, W
    Wanzenböck, H
    Lugstein, A
    Bertagnolli, E
    Gornik, E
    Smoliner, J
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2003, 19 (1-2): : 178 - 182
  • [2] Focussed Ion Beam Milling and Scanning Electron Microscopy of Brain Tissue
    Knott, Graham
    Rosset, Stephanie
    Cantoni, Marco
    JOVE-JOURNAL OF VISUALIZED EXPERIMENTS, 2011, (53):
  • [3] Comprehensive study of focused ion beam induced lateral damage in silicon by scanning probe microscopy techniques
    Rommel, M.
    Spoldi, G.
    Yanev, V.
    Beuer, S.
    Amon, B.
    Jambreck, J.
    Petersen, S.
    Bauer, A. J.
    Frey, L.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2010, 28 (03): : 595 - 607
  • [4] Ion bombardment induced damage in silicon carbide studied by ion beam analytical methods
    Szilágyi, E
    Khánh, NQ
    Horváth, ZE
    Lohner, T
    Battistig, G
    Zolnai, Z
    Kótai, E
    Gyulai, J
    SILICON CARBIDE AND RELATED MATERIALS, ECSCRM2000, 2001, 353-356 : 271 - 274
  • [5] Ion bombardment induced damage in silicon carbide studied by ion beam analytical methods
    Szilagyi, E., 2001, Trans Tech Publ, Uetikon-Zuerich (353-356)
  • [6] Evaluation of scanning capacitance microscopy sample preparation by focused ion beam
    Rodriguez, N.
    Adrian, J.
    Grosjean, C.
    Haller, G.
    Girardeaux, C.
    Portavoce, A.
    MICROELECTRONICS RELIABILITY, 2006, 46 (9-11) : 1554 - 1557
  • [7] The impact of focused ion beam induced damage on scanning spreading resistance microscopy measurements
    Pandey, Komal
    Paredis, Kristof
    Hantschel, Thomas
    Drijbooms, Chris
    Vandervorst, Wilfried
    SCIENTIFIC REPORTS, 2020, 10 (01)
  • [8] The impact of focused ion beam induced damage on scanning spreading resistance microscopy measurements
    Komal Pandey
    Kristof Paredis
    Thomas Hantschel
    Chris Drijbooms
    Wilfried Vandervorst
    Scientific Reports, 10
  • [9] Detailed characterisation of focused ion beam induced lateral damage on silicon carbide samples by electrical scanning probe microscopy and transmission electron microscopy
    Stumpf, F.
    Abu Quba, A. A.
    Singer, P.
    Rumler, M.
    Cherkashin, N.
    Schamm-Chardon, S.
    Cours, R.
    Rommel, M.
    JOURNAL OF APPLIED PHYSICS, 2018, 123 (12)
  • [10] EFFECTS OF ION MASS AND ENERGY ON THE DAMAGE INDUCED BY AN ION-BEAM ON GRAPHITE SURFACES - A SCANNING TUNNELING MICROSCOPY STUDY
    CORATGER, R
    CLAVERIE, A
    CHAHBOUN, A
    LANDRY, V
    AJUSTRON, F
    BEAUVILLAIN, J
    SURFACE SCIENCE, 1992, 262 (1-2) : 208 - 218
12345