P/He ion implant isolation technology for AlGaN/GaN HFETs

被引：28

作者：

Hanington, G ^{[1
]}

Hsin, YM

Liu, QZ

Asbeck, PM

Lau, SS

Khan, MA

Yang, JW

Chen, Q

机构：

[1] Univ Calif San Diego, La Jolla, CA 92093 USA

[2] Univ S Carolina, Columbia, SC 29208 USA

[3] APA Opt Inc, Blaine, MN 55449 USA

来源：

ELECTRONICS LETTERS | 1998年 / 34卷 / 02期

关键词：

D O I：

10.1049/el:19980091

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel process for the isolation of AlGaN/GaN HFETs is reported, utilising co-implantation of phosphorus and He ions. After implantations, the material sheet resistance is > 10(8) Omega/square, even at temperatures as high as 200 degrees C. The high resistance is maintained for high temperature anneals > 700 degrees C. HFETs fabricated with this procedure exhibit good characteristics.

引用

页码：193 / 195

页数：3

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