Compact Model for Organic Thin-Film Transistor

被引：37

作者：

Li, Ling ^{[1
]}

Marien, Hagen ^{[2
]}

Genoe, Jan ^{[1
]}

Steyaert, Michiel ^{[2
]}

Heremans, Paul ^{[1
]}

机构：

[1] IMEC, Polymer & Mol Elect Grp, B-3001 Louvain, Belgium

[2] Katholieke Univ Leuven, ESAT, Dept Elect Engn, B-3001 Louvain, Belgium

来源：

IEEE ELECTRON DEVICE LETTERS | 2010年 / 31卷 / 03期

关键词：

Compact model; Gaussian density of states (DOS); hopping transport; organic thin-film transistor (OTFT); SIMULATION; MOBILITY;

D O I：

10.1109/LED.2009.2039744

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this letter, a compact model for the dc current and capacitance of organic thin-film transistors is proposed. This model is based on the variable-range hopping-transport theory, and the double-exponential density-of-state function is assumed. The presented model can accurately describe the current from subthreshold regime to linear and saturation regime via a single unified formulation. Good agreement between the theoretical calculation and measurements of pentacene field-effect transistor is found. The application of this compact model on circuit simulation is also presented.

引用

页码：210 / 212

页数：3

共 8 条

[1] CHARGE TRANSPORT IN DISORDERED ORGANIC PHOTOCONDUCTORS - A MONTE-CARLO SIMULATION STUDY [J].