Effects of Ga and K Dual Doping on Thermoelectric Properties of N-type Bi2Te2.7Se0.3

被引：0

作者：

Duan Xingkai ^{[1
]}

Hu Konggang ^{[1
]}

Ding Shifeng ^{[1
]}

Man Dahu ^{[1
]}

Lin Weiming ^{[1
]}

Jin Haixia ^{[1
]}

机构：

[1] Jiujiang Univ, Jiujiang 332005, Peoples R China

来源：

RARE METAL MATERIALS AND ENGINEERING | 2015年 / 44卷 / 01期

关键词：

dual doping; hot pressing; microstructure; thermoelectric properties; ALLOYS;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

N-type Bi2Te2.7Se0.3 thermoelectric materials with Ga and K dual doping were synthesized by vacuum melting and hot pressing. XRD results indicate that Ga and K elements have been completely dissolved into the crystal structure of Bi2Te2.7Se0.3. The single-phase solid solution alloy has been formed. SEM results show that the bulk samples are compact with the laminated structure. Ga and K dual doping increases the Seebeck coefficient of Bi2Te2.7Se0.3 through Ga and K partial substitution of Bi in the most range of 300 similar to 500 K, while the electrical conductivity of the dual doped samples is improved. The thermal conductivity of the dual doped samples is higher than that of Bi2Te2.7Se0.3. The maximum ZT value reaches 1.05 at 500 K for Ga0.02Bi1.94K0.04Te3Se0.3 sample.

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页码：236 / 239

页数：4

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