CMOS large signal and RF noise model for CAD

被引：8

作者：

Angelov, I. ^{[1
]}

Ferndahl, M. ^{[1
]}

Ingvarson, F. ^{[1
]}

Zirath, H. ^{[1
,2
]}

Vickes, H. O. ^{[3
]}

机构：

[1] Chalmers, Microwave Elect Lab, S-41296 Gothenburg, Sweden

[2] Ericsson AB, Microwave & High Speed Elect Ctr, SE-43184 Molndal, Sweden

[3] Ericsson Microwave Syst, Dept Microwave Technol, SE-43184 Molndal, Sweden

来源：

2006 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE | 2006年

关键词：

D O I：

10.1109/EMICC.2006.282791

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A compact large-signal model(LS) for high frequency CMOS transistors is proposed and experimentally evaluated with DC, S-parameter, Power Spectrum measurements and load pool measurements. Very good correspondences between measurements on 90 nm CMOS FETs and simulations were achieved. Due to the low number of model parameters and the careful selection of model equations, the model exhibits excellent convergence behavior, a property important for successful nonlinear circuit simulation of RF circuits. The LS model was extended to model the RF Noise and implemented in commercial CAD tool and shows a good correspondence between the measurements and the model.

引用

页码：217 / +

页数：2

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