Microstructure tuning of epitaxial BaTiO3 - x thin films grown using laser molecular-beam epitaxy by varying the oxygen pressure

被引:13
作者
Zhu, Y. L. [1 ]
Zheng, S. J. [1 ]
Chen, D. [1 ]
Ma, X. L. [1 ]
机构
[1] Chinese Acad Sci, Inst Met Res, Shenyang Natl Lab Mat Sci, Shenyang 110016, Peoples R China
基金
中国国家自然科学基金;
关键词
BaTiO3-x; oxides; Thin films; oxygen pressure; {111}; twins; microstructure; X-ray diffraction; Laser molecular beam epitaxy; Transmission electron microscopy; 111; TWIN-BOUNDARY; TRANSPORT-PROPERTIES; MISFIT RELAXATION; SRTIO3; STOICHIOMETRY; PEROVSKITES; INTERFACE; MGO;
D O I
10.1016/j.tsf.2009.09.103
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Microstructural properties are found to be variant in the BaTiO3 (- x) films grown on SrTiO3(001) substrate under various oxygen pressures from 2 x 10(-2) Pa to 2 x 10(-5) Pa by laser molecular-beam epitaxy. Transmission electron microscopic studies reveal that the predominant defects in the films change from threading dislocations into (111) planar defects (i.e. stacking faults and nanotwins) by lowering the oxygen pressure. High density of these defects was observed in the BaTiO3 (-) (x) film prepared at the oxygen pressure of 2 x 10(-5) Pa, which shows metallic behavior. The relationships between oxygen pressure, microstructure, and electrical properties are established on the basis of oxygen deficiency. The formation of nanotwins in highly oxygen-deficient BaTiO3 - x epitaxial thin films results from accommodating excess oxygen vacancies induced by lowering oxygen pressure. (C) 2009 Elsevier B.V. All rights reserved.
引用
收藏
页码:3669 / 3673
页数:5
相关论文
共 25 条
[1]   Variable-range-hopping conduction and metal-insulator transition in Cu-doped BaTiO3 [J].
Ang, C ;
Jing, Z ;
Yu, Z .
JOURNAL OF PHYSICS-CONDENSED MATTER, 1999, 11 (48) :9703-9708
[2]   NON-STOICHIOMETRY IN SRTIO3 [J].
CHAN, NH ;
SHARMA, RK ;
SMYTH, DM .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (08) :1762-1769
[3]  
Cui DF, 2002, FERROELECTRICS, V271, P1683
[4]   CRYSTALLOGRAPHY OF (111) TWINS IN BATIO3 [J].
EIBL, O ;
PONGRATZ, P ;
SKALICKY, P .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1988, 57 (04) :521-534
[5]   STRUCTURAL, MAGNETIC, AND TRANSPORT-PROPERTIES OF RXBA1-XTIO3-DELTA SOLID-SOLUTIONS, WHERE R = LA, ND, GD, ER, AND Y - RARE-EARTH-DEPENDENT METAL-TO-SEMICONDUCTOR TRANSITIONS [J].
EYLEM, C ;
SAGHISZABO, G ;
CHEN, BH ;
EICHHORN, B ;
PENG, JL ;
GREENE, R ;
SALAMANCARIBA, L ;
NAHM, S .
CHEMISTRY OF MATERIALS, 1992, 4 (05) :1038-1046
[6]   NONORTHOGONAL TWINNING IN THIN-FILM OXIDE PEROVSKITES [J].
FAHEY, KP ;
CLEMENS, BM ;
WILLS, LA .
APPLIED PHYSICS LETTERS, 1995, 67 (17) :2480-2482
[7]  
FREUND LB, 2003, THIN FILM MAT DEFECT
[8]   Electrical transport properties of epitaxial BaTiO3 thin films [J].
Gilbert, SR ;
Wills, LA ;
Wessels, BW ;
Schindler, JL ;
Thomas, JA ;
Kannewurf, CR .
JOURNAL OF APPLIED PHYSICS, 1996, 80 (02) :969-977
[9]   (111) Twins in BaTiO3 thin films deposited by RF magnetron sputtering [J].
Jang, JW ;
Kim, YH ;
Hahn, TS ;
Choi, SS ;
Chung, SJ .
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1996, 35 (6A) :L699-L702
[10]  
Jia CL, 1998, PHILOS MAG A, V77, P923, DOI 10.1080/01418619808221220