Effect of electric field on recombination of self-trapped excitons in silicon nanocrystals

被引：2

作者：

Vandyshev, E. N. ^{[1
]}

Zhuravlev, K. S. ^{[1
]}

机构：

[1] Russian Acad Sci, Inst Semicond Phys, Lavrentieva 13, Novosibirsk 630090, Russia

来源：

PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 4, NO 2 | 2007年 / 4卷 / 02期

关键词：

D O I：

10.1002/pssc.200673341

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Study of the effect of an external electric field on photoluminescence (PL) of silicon nanocrystals formed in SiO2 has been carried out. It was found that the electric field results in a red shift of PL band and a decrease of the PL intensity at any temperature in the range of 5-290 K. A decay time of PL intensity after pulse excitation does not depend on the electric field strength. The experimental data are explained in framework of the model of recombination of self-trapped excitons formed at nanocrystal-matrix boundary.

引用

页码：382 / +

页数：2

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