Laser produced EUV light source development for HVM

被引:28
作者
Endo, Akira [1 ]
Hoshino, Hideo [1 ]
Suganuma, Takashi [1 ]
Moriya, Masato [1 ]
Ariga, Tatsuya [1 ]
Ueno, Yoshifumi [1 ]
Nakano, Masaki [1 ]
Asayama, Takeshi [1 ]
Abe, Tamotsu [1 ]
Komori, Hiroshi [1 ]
Soumagne, Georg [1 ]
Mizoguchi, Hakaru [1 ]
Sumitani, Akira [1 ]
Toyoda, Koichi [1 ]
机构
[1] EUVA Extreme Ultraviolet Lithog Syst Dev Assoc, 1200 Manda, Hiratsuka, Kanagawa 2548567, Japan
来源
EMERGING LITHOGRAPHIC TECHNOLOGIES XI, PTS 1 AND 2 | 2007年 / 6517卷
关键词
EUV light source; laser produced plasma; CO2; laser;
D O I
10.1117/12.711097
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
We develop a laser produced plasma light source for high volume manufacturing (HVM) EUV lithography. The light source is based on a short pulse, high power, high repetition rate CO2 master oscillator power amplifier (MOPA) laser system and a Tin droplet target. A maximum conversion efficiency of 4.5% was measured for a CO2 laser driven Sri plasma having a narrow spectrum at 13.5 nm. In addition, low debris generation was observed. The CO2 MOPA laser system is based on commercial high power cw CO2 lasers. We achieve an average laser power of 6 kW at 100 kHz with a single laser beam that has very good beam quality. In a first step, a 50-W light source is developing. Based on a 10-kW CO2 laser this light source is scalable to more than 100 W EUV in-band power.
引用
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页数:8
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