Reliability challenges for barrier/liner system in high aspect ratio through silicon vias

被引：10

作者：

Li, Yunlong ^{[1
]}

Van Huylenbroeck, Stefaan ^{[1
]}

Van Besien, Els ^{[1
]}

Shi, Xiaoping ^{[1
]}

Wu, Chen ^{[1
,2
]}

Stucchi, Michele ^{[1
]}

Beyer, Gerald ^{[1
]}

Beyne, Eric ^{[1
]}

De Wolf, Ingrid ^{[1
,2
]}

Croes, Kristof ^{[1
]}

机构：

[1] IMEC, B-3001 Leuven, Belgium

[2] Katholieke Univ Leuven, Dept Met & Mat, B-3001 Leuven, Belgium

来源：

MICROELECTRONICS RELIABILITY | 2014年 / 54卷 / 9-10期

关键词：

Through silicon vias (TSV); High aspect ratio; Reliability; Barrier/liner system;

D O I：

10.1016/j.microrel.2014.07.077

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The reliability results for barrier/liner systems in different high aspect ratio (5 x 50 mu m) through silicon vias (TSV) are presented. Quite a few factors can influence the TSV barrier/liner reliability performance, including the TSV trench etch process, the oxide liner material/thickness, etc. The challenges for more advanced TSV technology nodes (e.g. 3 x 40 mu m) are also discussed and possible solutions are proposed. (C) 2014 Elsevier Ltd. All rights reserved.

引用

页码：1949 / 1952

页数：4

共 12 条

[1]

[Anonymous], 2012, IEDM SAN FRANC CA US, DOI DOI 10.1109/IEDM.2012.6479066

[2]

[Anonymous], P INT IEEE EL DEV M

[3]

Berman A., 1981, P IEEE RELIABILITY P, P204

[4]

Beyne E, 2008, INT EL DEVICES MEET, P495

[5] Reliability analysis method for low-k interconnect dielectrics breakdown in integrated circuits -: art. no. 034503 [J].

Haase, GS ;

Ogawa, ET ;

McPherson, JW .

JOURNAL OF APPLIED PHYSICS, 2005, 98 (03)

[6]

Jourdain A., 2011, IEEE 61 EL COMP TECH, P1122

[7]

Li Y., 2012, IEEE EL COMP TECHN C, P304

[8]

Li Y, IRPS 2013 MONT CA

[9] Hydrogen outgassing induced liner/barrier reliability degradation in through silicon via's [J].

Li, Yunlong ;

Oba, Yoshiyuki ;

Wu, Chen ;

Van Huylenbroeck, Stefaan ;

Van Besien, Els ;

Vereecke, Guy ;

Stucchi, Michele ;

De Wolf, Ingrid ;

Beyer, Gerald ;

Beyne, Eric ;

Croes, Kristof .

APPLIED PHYSICS LETTERS, 2014, 104 (14)

[10]

Mercha A, 2010, INT EL DEV M IEDM, P26

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