Semiconductor moire materials

被引:285
作者
Mak, Kin Fai [1 ,2 ,3 ]
Shan, Jie [1 ,2 ,3 ]
机构
[1] Cornell Univ, Lab Atom & Solid State Phys, Ithaca, NY 14850 USA
[2] Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USA
[3] Kavli Inst Cornell Nanoscale Sci, Ithaca, NY 14850 USA
基金
美国国家科学基金会;
关键词
QUANTUM PHENOMENA; INSULATOR; MOTT; TRANSITION; PHASES; STATES; EXCITONS; SPIN; LIQUID;
D O I
10.1038/s41565-022-01165-6
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
This Review elaborates on the recent developments and the future opportunities and challenges of fundamental research on semiconductor moire materials, with a particular focus on transition metal dichalcogenides. Moire materials have emerged as a platform for exploring the physics of strong electronic correlations and non-trivial band topology. Here we review the recent progress in semiconductor moire materials, with a particular focus on transition metal dichalcogenides. Following a brief overview of the general features in this class of materials, we discuss recent theoretical and experimental studies on Hubbard physics, Kane-Mele-Hubbard physics and equilibrium moire excitons. We also comment on the future opportunities and challenges in the studies of transition metal dichalcogenide and other semiconductor moire materials.
引用
收藏
页码:686 / 695
页数:10
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