Semiconductor moire materials

被引：280

作者：

Mak, Kin Fai ^{[1
,2
,3
]}

Shan, Jie ^{[1
,2
,3
]}

机构：

[1] Cornell Univ, Lab Atom & Solid State Phys, Ithaca, NY 14850 USA

[2] Cornell Univ, Sch Appl & Engn Phys, Ithaca, NY 14853 USA

[3] Kavli Inst Cornell Nanoscale Sci, Ithaca, NY 14850 USA

来源：

NATURE NANOTECHNOLOGY | 2022年 / 17卷 / 07期

基金：

美国国家科学基金会;

关键词：

QUANTUM PHENOMENA; INSULATOR; MOTT; TRANSITION; PHASES; STATES; EXCITONS; SPIN; LIQUID;

D O I：

10.1038/s41565-022-01165-6

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

This Review elaborates on the recent developments and the future opportunities and challenges of fundamental research on semiconductor moire materials, with a particular focus on transition metal dichalcogenides. Moire materials have emerged as a platform for exploring the physics of strong electronic correlations and non-trivial band topology. Here we review the recent progress in semiconductor moire materials, with a particular focus on transition metal dichalcogenides. Following a brief overview of the general features in this class of materials, we discuss recent theoretical and experimental studies on Hubbard physics, Kane-Mele-Hubbard physics and equilibrium moire excitons. We also comment on the future opportunities and challenges in the studies of transition metal dichalcogenide and other semiconductor moire materials.

引用

页码：686 / 695

页数：10

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