Magnetic and structural properties of stoichiometric thin Fe3Si/GaAs(001) films

In this study, we report experimental results on the structural and magnetic properties of epitaxial Fe3Si films grown on GaAs(0 0 1) by co-evaporation. X-ray reflectivity shows that relatively smooth interfaces are obtained (roughness approximate to0.7 nm for the Fe3Si/GaAs interface), while SQUID magnetometry yields a magnetic moment Of 0.9 mu(B)/atom at room temperature, close to the bulk value. From magneto-optic Kerr effect measurements the cubic anisotropy constant was estimated as K-1 = 3.1 X 10(4) erg/cm(3). The electrical transport properties were also investigated by I-V and photoexcitation measurements, which show a Schottky behaviour (with a barrier height of 0.51 eV) and that spin detection is possible in this system. (0 2004 Elsevier B.V. All rights reserved.