Improvement of n-GaN Schottky diode rectifying characteristics using KOH etching

被引：33
作者：
Spradlin, J
Dogan, S
Mikkelson, M
Huang, D
He, L
Johnstone, D
Morkoç, H
Molnar, RJ
机构：
[1] Virginia Commonwealth Univ, Dept Elect Engn, Richmond, VA 23284 USA
[2] Virginia Commonwealth Univ, Dept Phys, Richmond, VA 23284 USA
[3] MIT, Lincoln Lab, Lexington, MA 02173 USA
[4] Ataturk Univ, Fac Art & Sci, Dept Phys, TR-25240 Erzurum, Turkey
来源：
APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 20期
关键词：
D O I：
10.1063/1.1572532
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
KOH etch was investigated as a means to improve the I-V characteristics of Schottky diodes on n-type GaN grown by molecular-beam epitaxy on sapphire, or on hydride vapor phase epitaxy templates. Atomic force microscopy images and I-V characteristics are presented. After etching as-grown films in molten KOH, Schottky diodes on c-plane GaN had orders of magnitude reduction in reverse leakage current. The best devices had leakage currents less than 10(-12) A (10(-8) A/cm(2)) at -5 V, and ideality factors of 1.04. Measurements on several different sample structures indicate a correlation between surface roughness and saturation current, and an improvement in ideality factor when etched in KOH. Phosphoric acid was also investigated, but did not result in significant improvements in I-V characteristics. (C) 2003 American Institute of Physics.
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收藏
页码：3556 / 3558
页数：3
相关论文
共 26 条
[1]  
Bandic ZZ, 1998, APPL PHYS LETT, V73, P3276, DOI 10.1063/1.122743
[2]   Simple interpretation of metal/wurtzite-GaN barrier heights [J].
Bermudez, VM .
JOURNAL OF APPLIED PHYSICS, 1999, 86 (02) :1170-1171
[3]   Measurement of induced surface charges, contact potentials, and surface states in GaN by electric force microscopy [J].
Bridger, PM ;
Bandic, ZZ ;
Piquette, EC ;
McGill, TC .
APPLIED PHYSICS LETTERS, 1999, 74 (23) :3522-3524
[4]  
CAO X, 2000, MRS INTERNET J NI S1, V5
[5]   Thermal stability study of Ni/Ta n-GaN Schottky contacts [J].
Chen, GL ;
Chang, FC ;
Shen, KC ;
Ou, J ;
Chen, WH ;
Lee, MC ;
Chen, WK ;
Jou, MJ ;
Huang, CN .
APPLIED PHYSICS LETTERS, 2002, 80 (04) :595-597
[6]   Enhanced electrical performance of Au/n-GaN Schottky diodes by novel processing [J].
He, L ;
Wang, XJ ;
Zhang, R .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1999, 17 (04) :1217-1220
[7]   Characterization of threading dislocations in GaN epitaxial layers [J].
Hino, T ;
Tomiya, S ;
Miyajima, T ;
Yanashima, K ;
Hashimoto, S ;
Ikeda, M .
APPLIED PHYSICS LETTERS, 2000, 76 (23) :3421-3423
[8]   Direct imaging of reverse-bias leakage through pure screw dislocations in GaN films grown by molecular beam epitaxy on GaN templates [J].
Hsu, JWP ;
Manfra, MJ ;
Molnar, RJ ;
Heying, B ;
Speck, JS .
APPLIED PHYSICS LETTERS, 2002, 81 (01) :79-81
[9]   Inhomogeneous spatial distribution of reverse bias leakage in GaN Schottky diodes [J].
Hsu, JWP ;
Manfra, MJ ;
Lang, DV ;
Richter, S ;
Chu, SNG ;
Sergent, AM ;
Kleiman, RN ;
Pfeiffer, LN ;
Molnar, RJ .
APPLIED PHYSICS LETTERS, 2001, 78 (12) :1685-1687
[10]   Dislocation scattering in a two-dimensional electron gas [J].
Jena, D ;
Gossard, AC ;
Mishra, UK .
APPLIED PHYSICS LETTERS, 2000, 76 (13) :1707-1709
123