Temperature dependent electrical properties in ITO/TPD/Alq3/Al organic light-emitting diodes

被引：6
|
作者：
Kim, SK [1 ]
Chung, DH
Lee, HS
Cho, HN
Park, JW
Hong, JW
Kim, TW
机构：
[1] Kwangwoon Univ, Dept Elect Engn, Seoul 139701, South Korea
[2] Hongik Univ, Dept Phys, Seoul 121791, South Korea
[3] Korea Inst Sci & Technol, Elect Mat & Devices Res Ctr, Seoul 130650, South Korea
[4] Chungju Natl Univ, Dept Polymer Engn, Chungju 380702, Taiwan
来源：
SYNTHETIC METALS | 2003年 / 137卷 / 1-3期
关键词：
organic light-emitting diodes; conduction mechanism; hopping model; Fowler-Nordheim tunneling;
D O I：
10.1016/S0379-6779(02)00895-0
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Temperature dependence of current-voltage-luminance characteristics in organic light-emitting diodes are studied in a device structure of ITO/TPD/Alq(3)/Al to understand an electrical conduction mechanism. The current-voltage-luminance characteristics are measured in the temperature range of 8Ksimilar to300K, and analyzed them using a hopping model with exponential trap distribution and Fowler-Nordheim tunneling. At low temperatures below 150K, the Fowler-Nordheim tunneling conduction mechanism is dominant. And we have obtained a zero field barrier height to be about 0.6similar to0.8eV
引用
收藏
页码：1041 / 1042
页数：2
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