Piezoresistive response of ITO films deposited at room temperature by magnetron sputtering

被引：15

作者：

Rasia, L. A. ^{[1
]}

Mansano, R. D. ^{[1
]}

Damiani, L. R. ^{[1
]}

Viana, C. E. ^{[1
]}

机构：

[1] Univ Sao Paulo, Lab Sistemas Integraveis, Escola Politecn, LSI PSI EPUSP, BR-05508900 Sao Paulo, Brazil

来源：

JOURNAL OF MATERIALS SCIENCE | 2010年 / 45卷 / 15期

基金：

巴西圣保罗研究基金会;

关键词：

OXIDE THIN-FILMS; OPTICAL-PROPERTIES; STRAIN-SENSOR; CARBON; OXYGEN;

D O I：

10.1007/s10853-010-4517-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Indium tin oxide (ITO) thin films have been deposited on (100) Si substrates by RF magnetron sputtering from a compact target (90% In(2)O(3)-10% SnO(2) in weight) with 6 in. in diameter. In order to perform electromechanical characterizations of these films, strain gauges were fabricated. An experimental set-up based on bending beam theory was developed to determine the longitudinal piezoresistive coefficient (pi(1)) of the strain gauges fabricated. It has been confirmed that electrical resistance of the strain gauges decreases with load increases which results a negative gauge factor. A model based on the activation energy was used to explain the origin of this negative signal. The influence of the temperature on piezoresistive properties of ITO films was also evaluated.

引用

页码：4224 / 4228

页数：5

共 18 条

[1] Use of the magnetron-sputtering technique for the control of the properties of indium tin oxide thin films [J].