Domain wall resistance in perpendicularly magnetized (Ga,Mn) As

被引：5

作者：

Chiba, D.

Yamanouchi, M.

Matsukura, F.

Dietl, T.

Ohno, H.

机构：

[1] Tohoku Univ, Res Inst Elect Commun, Lab Nanoelect & Spintron, Sendai, Miyagi 9808577, Japan

[2] Japan Sci & Technol Agcy, Exploratory Res Adv Technol, Semoconspintron Project, Aoba Ku, Sendai, Miyagi 9800023, Japan

[3] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

[4] Univ Warsaw, Inst Theoret Phys, PL-00681 Warsaw, Poland

来源：

JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 2007年 / 310卷 / 02期

关键词：

domain wall resistance; (Ga; Mn)As;

D O I：

10.1016/j.jmmm.2006.10.1119

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Domain wall (DW) resistance in perpendicularly magnetized (Ga, Mn) As has been investigated. The observed DW resistance is decomposed into extrinsic and intrinsic contributions. The former is explained quantitatively by the zig-zaging current due to an abrupt polarity change of the Hall electric field at DW. The latter is consistent with the disorder-induced mixing of spin channels due to small non-adiabacity of carrier spins subject to spatially varying local magnetic moment and is shown to be an order of magnitude greater than a contribution from anisotropic magnetoresistance. (c) 2006 Elsevier B.V. All rights reserved.

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页码：2078 / 2083

页数：6

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