Photocathode Characteristics of a Spray-Deposited Cu2ZnGeS4 Thin Film for CO2 Reduction in a CO2-Saturated Aqueous Solution

被引:41
作者
Ikeda, Shigeru [1 ]
Fujikawa, Shotaro [2 ]
Harada, Takashi [2 ]
Thi Hiep Nguyen [2 ]
Nakanishi, Shuji [2 ]
Takayama, Tomoaki [3 ]
Iwase, Akihide [3 ]
Kudo, Akihiko [3 ]
机构
[1] Konan Univ, Dept Chem, Higashinada Ku, 9-1 Okamoto, Kobe, Hyogo 6588501, Japan
[2] Osaka Univ, Res Ctr Solar Energy Chem, 1-3 Machikaneyama, Toyonaka, Osaka 5608531, Japan
[3] Tokyo Univ Sci, Fac Sci, Dept Appl Chem, Shinjuku Ku, 1-3 Kagurazaka, Tokyo 1628601, Japan
关键词
Cu2ZnGeS4 thin film; spray deposition; electron energy structure; photoelectrochemical CO2 reduction; surface modification; carrier injection and recombination; PHOTOELECTROCHEMICAL REDUCTION; WATER REDUCTION; SOLAR-CELL; CONVERSION; EFFICIENT; SULFIDE; COMPLEX; SYSTEM; PHOTOCATALYSTS; BIVO4;
D O I
10.1021/acsaem.9b01418
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
A kesterite Cu2ZnGeS4 (CZGS) thin film was prepared on an Mo-coated glass substrate by spray deposition of an aqueous solution containing constituent elements followed by heat treatment in a sulfur atmosphere. The results of analysis of the ionization potential of the CZGS thin film by photoelectron spectroscopy (PES) and the external quantum efficiency (EQE) spectrum of a solar cell device based on the CZGS thin film showed that this compound had ca. 0.7 eV more negative conduction band minimum (CBM) than that of the well-studied kesterite Cu2ZnSnS4 (CZTS) but had almost the same energy level of the valence band maximum (VBM) as that of CZTS. Owing to the relatively shallow CBM, the CZGS film worked as a photocathode for photoelectrochemical (PEC) CO2 reduction in a neutral aqueous solution (0.1 M KHCO3) saturated with CO2 by applying a bias potential lower than that for inducing the reaction under a dark condition, whereas the CZTS film could not work under the same condition. Enhancement of PEC CO2 reduction activity by surface coverage of the CZGS thin film with a ZnS layer is also discussed on the basis of the electronic structure of the thus-formed CZGS-ZnS interface.
引用
收藏
页码:6911 / 6918
页数:15
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